Tag: MTJs
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Enhanced Impact of Voltage-Controllable Magnetic Anisotropy by Introducing an Ultra-Thin Metallic Layer
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The magnetic properties and dynamics of electrical switching are vital factors in the development of non-volatile random access memory, such as magnetic tunnel junctions controlled by electrical voltages (VC-MRAM). This study addresses the impact of introducing an ultra-thin metal encapsulation layer on magnetic properties and voltage efficiency. Through multiple systematic…